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Transistor: N-MOSFET x2 | TrenchFET® | unipolar | 30V | 4.6A | Idm: 20A

EB Kods: EB1665288523

Ražotāja preces kods: 
SI4936CDY-T1-GE3

Ražotājs, zīmols: 
VISHAY

0,73 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET x2
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage30V
Drain current4.6A
Pulsed drain current20A
Power dissipation1.5W
CaseSO8
Gate-source voltage±20V
On-state resistance50mΩ
MountingSMD
Gate charge9nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced