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Transistor: N-MOSFET x2 | Trench | unipolar | 250V | 30A | Idm: 130A
Transistor: N-MOSFET x2 | Trench | unipolar | 250V | 30A | Idm: 130A
EB Kods: EB267154864
Ražotāja preces kods: FMM50-025TF
Ražotāja preces kods:
FMM50-025TF
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
24,46 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Technology | HiPerFET™ |
Technology | Trench |
Polarisation | unipolar |
Drain-source voltage | 250V |
Drain current | 30A |
Pulsed drain current | 130A |
Power dissipation | 125W |
Case | ISOPLUS i4-pac™ x024a |
Gate-source voltage | ±30V |
On-state resistance | 60mΩ |
Mounting | THT |
Gate charge | 78nC |
Kind of package | tube |
Kind of channel | enhanced |
Semiconductor structure | double series |
Reverse recovery time | 84ns |