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Transistor: N-MOSFET x2 | TRENCH POWER LV | unipolar | 30V | 9.6A
Transistor: N-MOSFET x2 | TRENCH POWER LV | unipolar | 30V | 9.6A
EB Kods: EB1085838942
Ražotāja preces kods: YJSD12N03A
Ražotāja preces kods:
YJSD12N03A
Ražotājs, zīmols: YANGJIE TECHNOLOGY
Ražotājs, zīmols:
YANGJIE TECHNOLOGY
0,36 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET x2 |
Technology | TRENCH POWER LV |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 9.6A |
Pulsed drain current | 50A |
Power dissipation | 2.5W |
Case | SOP8 |
Gate-source voltage | ±20V |
On-state resistance | 15mΩ |
Mounting | SMD |
Gate charge | 23.6nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |