Tulkot latviski
IC: driver | MOSFET half-bridge | high-side,gate driver | SO8
IC: driver | MOSFET half-bridge | high-side,gate driver | SO8
EB Kods: EB1371309175
Ražotāja preces kods: NCP81080DR2G
Ražotāja preces kods:
NCP81080DR2G
Ražotājs, zīmols: ONSEMI
Ražotājs, zīmols:
ONSEMI
1,84 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of integrated circuit | driver |
Topology | MOSFET half-bridge |
Kind of integrated circuit | gate driver |
Kind of integrated circuit | high-side |
Case | SO8 |
Output current | -800...500mA |
Supply voltage | 5.5...20V DC |
Mounting | SMD |
Operating temperature | -40...140°C |
Impulse rise time | 19ns |
Pulse fall time | 17ns |