Tulkot latviski
Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 80A
Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 80A
EB Kods: EB1036211612
Ražotāja preces kods: SKM100GB125DN
Ražotāja preces kods:
SKM100GB125DN
Ražotājs, zīmols: SEMIKRON DANFOSS
Ražotājs, zīmols:
SEMIKRON DANFOSS
191,27 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | IGBT |
Semiconductor structure | transistor/transistor |
Topology | IGBT half-bridge |
Max. off-state voltage | 1.2kV |
Collector current | 80A |
Case | SEMITRANS2N |
Version | D93 |
Application | for UPS |
Application | Inverter |
Application | photovoltaics |
Electrical mounting | FASTON connectors |
Electrical mounting | screw |
Gate-emitter voltage | ±20V |
Pulsed collector current | 150A |
Mechanical mounting | screw |