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Module: IGBT | transistor/transistor | IGBT half-bridge | Ic: 200A

EB Kods: EB1033670262

Ražotāja preces kods: 
FF200R17KE4HOSA1

Ražotājs, zīmols: 
INFINEON TECHNOLOGIES

 278,27 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā 4 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of moduleIGBT
Semiconductor structuretransistor/transistor
TopologyIGBT half-bridge
Max. off-state voltage1.7kV
Collector current200A
CaseAG-62MM-1
Electrical mountingscrew
Gate-emitter voltage±20V
Pulsed collector current400A
Power dissipation1.25kW
Mechanical mountingscrew