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Module: IGBT | single transistor | Urmax: 1.7kV | Ic: 75A | SOT227B

EB Kods: EB865993122

Ražotāja preces kods: 
IXBN75N170

Ražotājs, zīmols: 
IXYS

 133,38 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of moduleIGBT
Semiconductor structuresingle transistor
Max. off-state voltage1.7kV
Collector current75A
CaseSOT227B
Electrical mountingscrew
Gate-emitter voltage±20V
Pulsed collector current680A
Power dissipation625W
TechnologyBiMOSFET™
Features of semiconductor deviceshigh voltage
Mechanical mountingscrew