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Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 65A | SOT227B

EB Kods: EB541588711

Ražotāja preces kods: 
IXA70I1200NA

Ražotājs, zīmols: 
IXYS

 49,31  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of moduleIGBT
Semiconductor structuresingle transistor
Max. off-state voltage1.2kV
Collector current65A
CaseSOT227B
Electrical mountingscrew
Gate-emitter voltage±20V
Pulsed collector current150A
Power dissipation350W
TechnologyXPT™
Features of semiconductor deviceshigh voltage
Mechanical mountingscrew