Tulkot latviski
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 100A | SOT227B
Module: IGBT | single transistor | Urmax: 1.2kV | Ic: 100A | SOT227B
EB Kods: EB351818841
Ražotāja preces kods: VS-GT100DA120UF
Ražotāja preces kods:
VS-GT100DA120UF
Ražotājs, zīmols: VISHAY
Ražotājs, zīmols:
VISHAY
68,30 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 9 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | IGBT |
Semiconductor structure | single transistor |
Max. off-state voltage | 1.2kV |
Collector current | 100A |
Case | SOT227B |
Electrical mounting | screw |
Gate-emitter voltage | ±20V |
Pulsed collector current | 240A |
Technology | Trench |
Features of semiconductor devices | integrated anti-parallel diode |
Mechanical mounting | screw |