Tulkot latviski
Module: IGBT | diode/transistor | boost chopper | Urmax: 1.2kV | D56
Module: IGBT | diode/transistor | boost chopper | Urmax: 1.2kV | D56
EB Kods: EB1717565669
Ražotāja preces kods: SKM200GAL125D 22890740
Ražotāja preces kods:
SKM200GAL125D 22890740
Ražotājs, zīmols: SEMIKRON DANFOSS
Ražotājs, zīmols:
SEMIKRON DANFOSS
260,64 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 7 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of module | IGBT |
Semiconductor structure | diode/transistor |
Topology | boost chopper |
Max. off-state voltage | 1.2kV |
Collector current | 20A |
Case | SEMITRANS3 |
Version | D56 |
Application | for UPS |
Application | frequency changer |
Application | Inverter |
Application | photovoltaics |
Electrical mounting | FASTON connectors |
Electrical mounting | screw |
Gate-emitter voltage | ±20V |
Pulsed collector current | 40A |
Mechanical mounting | screw |