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Diode: Schottky rectifying | SiC | THT | 650V | 8Ax2 | TO247-3 | Ir: 10uA
Diode: Schottky rectifying | SiC | THT | 650V | 8Ax2 | TO247-3 | Ir: 10uA
EB Kods: EB31038257
Ražotāja preces kods: B1D16065HC
Ražotāja preces kods:
B1D16065HC
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
5,51 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of diode | Schottky rectifying |
Technology | SiC |
Mounting | THT |
Max. off-state voltage | 650V |
Load current | 8A x2 |
Semiconductor structure | common cathode |
Semiconductor structure | double |
Case | TO247-3 |
Max. forward voltage | 1.75V |
Max. load current | 16A |
Max. forward impulse current | 60A |
Leakage current | 10µA |
Power dissipation | 73W |
Kind of package | tube |