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Diode: Schottky rectifying | SiC | THT | 650V | 10Ax2 | TO3PF | Ir: 20uA
Diode: Schottky rectifying | SiC | THT | 650V | 10Ax2 | TO3PF | Ir: 20uA
EB Kods: EB1708888612
Ražotāja preces kods: B2D20065TF
Ražotāja preces kods:
B2D20065TF
Ražotājs, zīmols: BASiC SEMICONDUCTOR
Ražotājs, zīmols:
BASiC SEMICONDUCTOR
5,63 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of diode | Schottky rectifying |
Technology | SiC |
Mounting | THT |
Max. off-state voltage | 650V |
Load current | 10A x2 |
Semiconductor structure | common cathode |
Semiconductor structure | double |
Case | TO3PF |
Max. forward voltage | 1.62V |
Max. load current | 20A |
Max. forward impulse current | 70A |
Leakage current | 20µA |
Power dissipation | 33W |
Kind of package | tube |