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ADVANCED SEMICONDUCTOR ANALYZER with Curve Tracing
ADVANCED SEMICONDUCTOR ANALYZER with Curve Tracing
EB Kods: EB299452416
Ražotāja preces kods: DCA75
Ražotāja preces kods:
DCA75
Ražotājs, zīmols: United Kingdom
Ražotājs, zīmols:
United Kingdom
306,33 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 8-10 darba dienas pēc apmaksas.
⛟ Piegāde 8-10 darba dienas pēc apmaksas.
Product basic info: "
†Primary colours: Grey "
†Additional colours: Black "
†Depth unit: 20 mm "
†Height unit: 70 mm "
†Width unit: 103 mm "
†Weight unit: 98 g "†Technical data: "
†Maximum peak test current into s/c: 12 mA "
†Maximum peak test voltage across o/s: 12 V "
†Diode specs:
†SCR/triac specs:
†Transistor specs:
†Operating temperature range: 10-40 °C "†Power supply: "
†Batteries included: No "
†Number of batteries: 1 "
†Battery voltage rating: 1.5 V "
†Battery composition: Alkaline "
†Battery IEC size: AAA (LR03, R03, FR03, HR03, KR03, ZR03 ,24A, 24D, 24LF, UM4, Micro, MN2400, MX2400, MV2400)
stand-alone or with a PC "†automatic component type identification "†automatic pinout identification "†special feature identification such as protection diodes and resistor shunts "†bipolar transistors: gain and leakage current measurements, silicon and germanium detection "†gate threshold measurement for Enhancement Mode MOSFETs "†semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions "†automatic and manual power-off
†Primary colours: Grey "
†Additional colours: Black "
†Depth unit: 20 mm "
†Height unit: 70 mm "
†Width unit: 103 mm "
†Weight unit: 98 g "†Technical data: "
†Maximum peak test current into s/c: 12 mA "
†Maximum peak test voltage across o/s: 12 V "
†Diode specs:
- Test current: 5.0 mA
- Voltage accuracy: -2% -20 mV to +2% +20 mV
- Vf for LED identification: 1.50 V - 4.00 V
- Short circuit threshold: 10 Ohm
†SCR/triac specs:
- Gate test current: 4.5 mA
- Load test current: 5.0 mA
†Transistor specs:
- Gain range (Hfe): 4 - 65000
- Gain accuracy: ± 3 % ± 5 Hfe
- Vceo test voltage: 2.0 V - 3.0 V
- Vbe accuracy: -2 % -20 mV to +2 % +20 mV
- VBE for Darlington (shunted): 0.95 V - 1.80 V (0.75 V - 1.80 V)
- Base-emitter shunt threshold: 50 kOhm - 70 kOhm
- BJT collector test current: 2.45 mA - 2.55 mA
- BJT acceptable leakage: 0.7 mA
- MOSFET:
- Gate threshold range: 0.1 V - 5.0 V
- Threshold accuracy: -2 % -20 mV to +2 % +20 mV
- Drain test current: 2.45 mA - 2.55 mA
- Gate resistance: 8 kOhm
- Depletion drain test current: 4.5 mA
- JFET drain-source test current: 0.5 mA - 5.5 mA
†Operating temperature range: 10-40 °C "†Power supply: "
†Batteries included: No "
†Number of batteries: 1 "
†Battery voltage rating: 1.5 V "
†Battery composition: Alkaline "
†Battery IEC size: AAA (LR03, R03, FR03, HR03, KR03, ZR03 ,24A, 24D, 24LF, UM4, Micro, MN2400, MX2400, MV2400)
stand-alone or with a PC "†automatic component type identification "†automatic pinout identification "†special feature identification such as protection diodes and resistor shunts "†bipolar transistors: gain and leakage current measurements, silicon and germanium detection "†gate threshold measurement for Enhancement Mode MOSFETs "†semiconductor forward voltage measurement for diodes, LEDs and transistor Base-Emitter junctions "†automatic and manual power-off