Tulkot latviski

Transistor: N-MOSFET | TrenchFET® | unipolar | 20V | 7.9A | Idm: 20A

EB Kood: EB887403562

Tootja kauba kood: 
SI3460DDV-T1-GE3

Tootja, kaubamärk: 
VISHAY

 0,70 € 
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
Küsimus?
-+

Product Properties

Type of transistorN-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage20V
Drain current7.9A
Pulsed drain current20A
Power dissipation1.7W
CaseTSOP6
Gate-source voltage±8V
On-state resistance28mΩ
MountingSMD
Gate charge18nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced