Tulkot latviski
Transistor: N-MOSFET | unipolar | 600V | 4A | Idm: 16A | 30W | PG-TO252-3
Transistor: N-MOSFET | unipolar | 600V | 4A | Idm: 16A | 30W | PG-TO252-3
EB Kood: EB1593851885
Tootja kauba kood: IPD60R600P7SAUMA1
Tootja kauba kood:
IPD60R600P7SAUMA1
Tootja, kaubamärk: INFINEON TECHNOLOGIES
Tootja, kaubamärk:
INFINEON TECHNOLOGIES
1,68 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | CoolMOS™ P7 |
Polarisation | unipolar |
Drain-source voltage | 600V |
Drain current | 4A |
Pulsed drain current | 16A |
Power dissipation | 30W |
Case | PG-TO252-3 |
Gate-source voltage | ±20V |
On-state resistance | 0.6Ω |
Mounting | SMD |
Gate charge | 9nC |
Kind of channel | enhanced |
Features of semiconductor devices | ESD protected gate |