Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 100A | Idm: 260A | 600W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 100A | Idm: 260A | 600W
EB Kood: EB1129940394
Tootja kauba kood: DIW120SIC023-AQ
Tootja kauba kood:
DIW120SIC023-AQ
Tootja, kaubamärk: DIOTEC SEMICONDUCTOR
Tootja, kaubamärk:
DIOTEC SEMICONDUCTOR
101,09 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 100A |
| Pulsed drain current | 260A |
| Power dissipation | 600W |
| Case | TO247-3 |
| Gate-source voltage | -4...18V |
| On-state resistance | 29mΩ |
| Mounting | THT |
| Gate charge | 45nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Application | automotive industry |