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Transistor: IGBT | BiMOSFET™ | 1.7kV | 10A | 150W | TO268
Transistor: IGBT | BiMOSFET™ | 1.7kV | 10A | 150W | TO268
EB Kood: EB1238034084
Tootja kauba kood: IXBT16N170A
Tootja kauba kood:
IXBT16N170A
Tootja, kaubamärk: IXYS
Tootja, kaubamärk:
IXYS
19,60 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos 9 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | IGBT |
| Technology | BiMOSFET™ |
| Collector-emitter voltage | 1.7kV |
| Collector current | 10A |
| Power dissipation | 150W |
| Case | TO268 |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 40A |
| Mounting | SMD |
| Gate charge | 65nC |
| Kind of package | tube |
| Turn-on time | 43ns |
| Turn-off time | 370ns |
| Features of semiconductor devices | high voltage |