Tulkot latviski

Transistor: IGBT | BiMOSFET™ | 1.7kV | 10A | 140W | TO268

EB Kood: EB1052532185

Tootja kauba kood: 
IXBT10N170

Tootja, kaubamärk: 
IXYS

14,66 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
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Product Properties

Type of transistorIGBT
TechnologyBiMOSFET™
Collector-emitter voltage1.7kV
Collector current10A
Power dissipation140W
CaseTO268
Gate-emitter voltage±20V
Pulsed collector current40A
MountingSMD
Gate charge30nC
Kind of packagetube
Turn-on time63ns
Turn-off time1.8µs
Features of semiconductor deviceshigh voltage