Tulkot latviski
Transistor: P-MOSFET | unipolar | -20V | -1.3A | Idm: -5.2A | 350mW
Transistor: P-MOSFET | unipolar | -20V | -1.3A | Idm: -5.2A | 350mW
EB Kood: EB965313908
Tootja kauba kood: PJC7407_R1_00001
Tootja kauba kood:
PJC7407_R1_00001
Tootja, kaubamärk: PanJit Semiconductor
Tootja, kaubamärk:
PanJit Semiconductor
0,58 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of transistor | P-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | -20V |
| Drain current | -1.3A |
| Pulsed drain current | -5.2A |
| Power dissipation | 0.35W |
| Case | SOT323 |
| Gate-source voltage | ±12V |
| On-state resistance | 0.2Ω |
| Mounting | SMD |
| Gate charge | 5.4nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |