Tulkot latviski

Transistor: P-MOSFET | TrenchFET® | unipolar | -40V | -3.6A | Idm: -15A

EB Kood: EB614721656

Tootja kauba kood: 
SI2319DDS-T1-GE3

Tootja, kaubamärk: 
VISHAY

 0,63  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
-+

Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-40V
Drain current-3.6A
Pulsed drain current-15A
Power dissipation1.7W
CaseSOT23
Gate-source voltage±20V
On-state resistance0.1Ω
MountingSMD
Gate charge19nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced