Tulkot latviski
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -156A | Idm: -400A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -156A | Idm: -400A
EB Kood: EB357261424
Tootja kauba kood: SIRA99DP-T1-GE3
Tootja kauba kood:
SIRA99DP-T1-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
3,22 €
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Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -156A |
Pulsed drain current | -400A |
Power dissipation | 66.6W |
Case | PowerPAK® SO8 |
Gate-source voltage | -20...16V |
On-state resistance | 2.65mΩ |
Mounting | SMD |
Gate charge | 260nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhancement |