Tulkot latviski

Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 4.1A | Idm: 15A | 100W

EB Kood: EB1697330651

Tootja kauba kood: 
S1M1000170J

Tootja, kaubamärk: 
SMC DIODE SOLUTIONS

 4,96 € 
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Saadaval tarnija laos >10 tk
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.7kV
Drain current4.1A
Pulsed drain current15A
Power dissipation100W
CaseD2PAK-7
Gate-source voltage-5...20V
On-state resistance1.9Ω
MountingSMD
Gate charge10nC
Kind of packagetube
Kind of channelenhancement
Features of semiconductor devicesKelvin terminal