Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 3.7A | Idm: 15A | 81W
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 3.7A | Idm: 15A | 81W
EB Kood: EB1436345112
Tootja kauba kood: S1M1000170D
Tootja kauba kood:
S1M1000170D
Tootja, kaubamärk: SMC DIODE SOLUTIONS
Tootja, kaubamärk:
SMC DIODE SOLUTIONS
2,94 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 1.7kV |
Drain current | 3.7A |
Pulsed drain current | 15A |
Power dissipation | 81W |
Case | TO247-3 |
Gate-source voltage | -5...20V |
On-state resistance | 1.9Ω |
Mounting | THT |
Gate charge | 10nC |
Kind of package | tube |
Kind of channel | enhancement |