Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 33A | Idm: 85A | 250W
Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 33A | Idm: 85A | 250W
EB Kood: EB1078944992
Tootja kauba kood: B2M065120Z
Tootja kauba kood:
B2M065120Z
Tootja, kaubamärk: BASiC SEMICONDUCTOR
Tootja, kaubamärk:
BASiC SEMICONDUCTOR
16,15 €
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Saadaval tarnija laos >10 tk
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| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.2kV |
| Drain current | 33A |
| Pulsed drain current | 85A |
| Power dissipation | 250W |
| Case | TO247-4 |
| Gate-source voltage | -4...18V |
| On-state resistance | 65mΩ |
| Mounting | THT |
| Gate charge | 60nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Features of semiconductor devices | Kelvin terminal |