Tulkot latviski
Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 12.2A | Idm: 50A
Transistor: N-MOSFET | TrenchFET® | unipolar | 30V | 12.2A | Idm: 50A
EB Kood: EB2072788647
Tootja kauba kood: SIS406DN-T1-GE3
Tootja kauba kood:
SIS406DN-T1-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
1,14 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 12.2A |
Pulsed drain current | 50A |
Power dissipation | 2.3W |
Case | PowerPAK® 1212-8 |
Gate-source voltage | ±25V |
On-state resistance | 14.5mΩ |
Mounting | SMD |
Gate charge | 28nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |