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Transistor: N-MOSFET | TrenchFET® | unipolar | 20V | 530mA | Idm: 2A
Transistor: N-MOSFET | TrenchFET® | unipolar | 20V | 530mA | Idm: 2A
EB Kood: EB367537273
Tootja kauba kood: SI1062X-T1-GE3
Tootja kauba kood:
SI1062X-T1-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
0,35 €
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Type of transistor | N-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 20V |
Drain current | 0.53A |
Pulsed drain current | 2A |
Power dissipation | 0.22W |
Case | SC89 |
Case | SOT563 |
Gate-source voltage | ±8V |
On-state resistance | 762mΩ |
Mounting | SMD |
Gate charge | 2.7nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |