Tulkot latviski

Transistor: N-MOSFET | TrenchFET® | unipolar | 20V | 530mA | Idm: 2A

EB Kood: EB367537273

Tootja kauba kood: 
SI1062X-T1-GE3

Tootja, kaubamärk: 
VISHAY

 0,35  
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist. 
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Type of transistorN-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage20V
Drain current0.53A
Pulsed drain current2A
Power dissipation0.22W
CaseSC89
CaseSOT563
Gate-source voltage±8V
On-state resistance762mΩ
MountingSMD
Gate charge2.7nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced