Tulkot latviski
Transistor: N-MOSFET + Schottky | TrenchFET® | unipolar | 25V | 60A
Transistor: N-MOSFET + Schottky | TrenchFET® | unipolar | 25V | 60A
EB Kood: EB964911590
Tootja kauba kood: SIRC16DP-T1-GE3
Tootja kauba kood:
SIRC16DP-T1-GE3
Tootja, kaubamärk: VISHAY
Tootja, kaubamärk:
VISHAY
1,82 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET + Schottky |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 25V |
Drain current | 60A |
Pulsed drain current | 250A |
Power dissipation | 34.7W |
Case | PowerPAK® SO8 |
Gate-source voltage | -16...20V |
On-state resistance | 1.4mΩ |
Mounting | SMD |
Gate charge | 105nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhancement |