Tulkot latviski
Transistor: N-MOSFET x2 | unipolar | 60V | 4.5A | Idm: 18A | 2W | SOP8 | ESD
Transistor: N-MOSFET x2 | unipolar | 60V | 4.5A | Idm: 18A | 2W | SOP8 | ESD
EB Kood: EB308172403
Tootja kauba kood: SP8K32HZGTB
Tootja kauba kood:
SP8K32HZGTB
Tootja, kaubamärk: ROHM SEMICONDUCTOR
Tootja, kaubamärk:
ROHM SEMICONDUCTOR
2,05 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 4.5A |
Pulsed drain current | 18A |
Power dissipation | 2W |
Case | SOP8 |
Gate-source voltage | ±20V |
On-state resistance | 77mΩ |
Mounting | SMD |
Gate charge | 7nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Version | ESD |