Tulkot latviski
Transistor: N-MOSFET x2 | unipolar | 30V | 0.9A | Idm: 9.6A | 0.32W | ESD
Transistor: N-MOSFET x2 | unipolar | 30V | 0.9A | Idm: 9.6A | 0.32W | ESD
EB Kood: EB741871071
Tootja kauba kood: DMN3190LDW-7
Tootja kauba kood:
DMN3190LDW-7
Tootja, kaubamärk: DIODES INCORPORATED
Tootja, kaubamärk:
DIODES INCORPORATED
0,60 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
Type of transistor | N-MOSFET x2 |
Polarisation | unipolar |
Drain-source voltage | 30V |
Drain current | 0.9A |
Pulsed drain current | 9.6A |
Power dissipation | 0.32W |
Case | SOT363 |
Gate-source voltage | ±20V |
On-state resistance | 0.19Ω |
Mounting | SMD |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |
Version | ESD |