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Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L3.0
Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L3.0
Code: EB2101475161
Manufacturer's product code: GD35PJY120L3S
Manufacturer's product code:
GD35PJY120L3S
Manufacturer, Brand: STARPOWER SEMICONDUCTOR
Manufacturer, Brand:
STARPOWER SEMICONDUCTOR
57,17 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of module | IGBT |
Semiconductor structure | diode/transistor |
Topology | boost chopper |
Topology | IGBT three-phase bridge OE output |
Topology | NTC thermistor |
Topology | three-phase diode bridge |
Max. off-state voltage | 1.2kV |
Collector current | 35A |
Case | L3.0 |
Electrical mounting | Press-in PCB |
Gate-emitter voltage | ±20V |
Pulsed collector current | 70A |
Technology | Advanced Trench FS IGBT |
Mechanical mounting | screw |