Tulkot latviski
Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L3.0
Module: IGBT | diode/transistor | boost chopper | Urmax: 1200V | L3.0
EB Kood: EB2101475161
Tootja kauba kood: GD35PJY120L3S
Tootja kauba kood:
GD35PJY120L3S
Tootja, kaubamärk: STARPOWER SEMICONDUCTOR
Tootja, kaubamärk:
STARPOWER SEMICONDUCTOR
58,53 €
Sisaldab käibemaksu / gb
Saadaval tarnija laos >10 tk
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
⛟ Tarne 1-3 tööpäeva jooksul pärast makse sooritamist.
| Type of module | IGBT |
| Semiconductor structure | diode/transistor |
| Topology | boost chopper |
| Topology | IGBT three-phase bridge OE output |
| Topology | NTC thermistor |
| Topology | three-phase diode bridge |
| Max. off-state voltage | 1.2kV |
| Collector current | 35A |
| Case | L3.0 |
| Electrical mounting | Press-in PCB |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 70A |
| Technology | Advanced Trench FS IGBT |
| Mechanical mounting | screw |