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Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -12A | Idm: -40A
Transistor: P-MOSFET | TrenchFET® | unipolar | -30V | -12A | Idm: -40A
Code: EB232917812
Manufacturer's product code: SIA469DJ-T1-GE3
Manufacturer's product code:
SIA469DJ-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
0,41 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | P-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | -30V |
Drain current | -12A |
Pulsed drain current | -40A |
Power dissipation | 15.6W |
Gate-source voltage | ±20V |
On-state resistance | 40mΩ |
Mounting | SMD |
Gate charge | 32nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |