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Transistor: N-MOSFET | SiC | unipolar | 650V | 18A | Idm: 69A | 96W | TO247
Transistor: N-MOSFET | SiC | unipolar | 650V | 18A | Idm: 69A | 96W | TO247
Code: EB2089485620
Manufacturer's product code: IMW65R072M1HXKSA1
Manufacturer's product code:
IMW65R072M1HXKSA1
Manufacturer, Brand: INFINEON TECHNOLOGIES
Manufacturer, Brand:
INFINEON TECHNOLOGIES
23,94 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | CoolSiC™ |
Technology | SiC |
Polarisation | unipolar |
Drain-source voltage | 650V |
Drain current | 18A |
Pulsed drain current | 69A |
Power dissipation | 96W |
Case | TO247 |
Gate-source voltage | -5...23V |
On-state resistance | 94mΩ |
Mounting | THT |
Kind of package | tube |
Kind of channel | enhanced |