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Transistor: P-MOSFET | TrenchFET® | unipolar | -20V | -89.6A | 42.1W

Code: EB1864958207

Manufacturer's product code: 
SISS61DN-T1-GE3

Manufacturer, Brand: 
VISHAY

1,27 
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment. 
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Type of transistorP-MOSFET
TechnologyTrenchFET®
Polarisationunipolar
Drain-source voltage-20V
Drain current-89.6A
Pulsed drain current-200A
Power dissipation42.1W
CasePowerPAK® 1212-8
Gate-source voltage±8V
On-state resistance9.8mΩ
MountingSMD
Gate charge231nC
Kind of packagereel
Kind of packagetape
Kind of channelenhanced