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Transistor: N-MOSFET | TrenchFET® | unipolar | 60V | 3.2A | Idm: 10A
Transistor: N-MOSFET | TrenchFET® | unipolar | 60V | 3.2A | Idm: 10A
Code: EB632185711
Manufacturer's product code: SI3458BDV-T1-GE3
Manufacturer's product code:
SI3458BDV-T1-GE3
Manufacturer, Brand: VISHAY
Manufacturer, Brand:
VISHAY
1,20 €
incl. VAT / gb
At supplier's warehouse >10
⛟ Delivery 1-3 working days after payment.
⛟ Delivery 1-3 working days after payment.
Type of transistor | N-MOSFET |
Technology | TrenchFET® |
Polarisation | unipolar |
Drain-source voltage | 60V |
Drain current | 3.2A |
Pulsed drain current | 10A |
Power dissipation | 2.1W |
Case | TSOP6 |
Gate-source voltage | ±20V |
On-state resistance | 0.1Ω |
Mounting | SMD |
Gate charge | 11nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |