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IC: driver | IGBT half-bridge,MOSFET half-bridge | SO16-W | -5÷2.5A
IC: driver | IGBT half-bridge,MOSFET half-bridge | SO16-W | -5÷2.5A
EB Kods: EB2094726143
Ražotāja preces kods: ISO5852SDW
Ražotāja preces kods:
ISO5852SDW
Ražotājs, zīmols: TEXAS INSTRUMENTS
Ražotājs, zīmols:
TEXAS INSTRUMENTS
11,84 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of integrated circuit | driver |
Topology | IGBT half-bridge |
Topology | MOSFET half-bridge |
Kind of integrated circuit | gate driver |
Kind of integrated circuit | high-/low-side |
Case | SO16-W |
Output current | -5...2.5A |
Number of channels | 2 |
Supply voltage | 15...30V DC |
Integrated circuit features | galvanically isolated |
Mounting | SMD |
Operating temperature | -40...125°C |
Impulse rise time | 35ns |
Pulse fall time | 37ns |
Input voltage | 2.25...5.5V |
Kind of package | tube |
Protection | undervoltage UVP |
Insulation voltage | 5.7kV |