Tulkot latviski

Transistor: IGBT | 600V | 19A | 196W | TO220

EB Kods: EB952201451

Ražotāja preces kods: 
DG10X06T1

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

 2,05 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
Uzdot jautājumu
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Product Properties

Type of transistorIGBT
Collector-emitter voltage600V
Collector current19A
Power dissipation196W
CaseTO220
Gate-emitter voltage±20V
Pulsed collector current30A
MountingTHT
Gate charge70nC
Kind of packagetube
Turn-on time21ns
Turn-off time208ns
Features of semiconductor devicesintegrated anti-parallel diode