Tulkot latviski

Transistor: IGBT | 650V | 50A | 714W | TO247

EB Kods: EB1596128762

Ražotāja preces kods: 
DG50X07T2

Ražotājs, zīmols: 
STARPOWER SEMICONDUCTOR

 5,69  
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
-+

Type of transistorIGBT
Collector-emitter voltage650V
Collector current50A
Power dissipation714W
CaseTO247
Gate-emitter voltage±20V
Pulsed collector current150A
MountingTHT
Gate charge0.35µC
Kind of packagetube
Turn-on time36ns
Turn-off time200ns
Features of semiconductor devicesintegrated anti-parallel diode