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Diode: Schottky rectifying | SiC | THT | 1.2kV | 8Ax2 | TO247-3 | Ir: 30uA

EB Kods: EB1266033822

Ražotāja preces kods: 
B2D16120HC1

Ražotājs, zīmols: 
BASiC SEMICONDUCTOR

6,30 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of diodeSchottky rectifying
TechnologySiC
MountingTHT
Max. off-state voltage1.2kV
Load current8A x2
Semiconductor structurecommon cathode
Semiconductor structuredouble
CaseTO247-3
Max. forward voltage1.82V
Max. load current16A
Max. forward impulse current80A
Leakage current30µA
Power dissipation74W
Kind of packagetube