Tulkot latviski
Transistor: P-MOSFET | TrenchP™ | unipolar | -200V | -68A | 568W | TO268
Transistor: P-MOSFET | TrenchP™ | unipolar | -200V | -68A | 568W | TO268
EB Kods: EB1667655169
Ražotāja preces kods: IXTT68P20T
Ražotāja preces kods:
IXTT68P20T
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
21,92 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Technology | TrenchP™ |
| Polarisation | unipolar |
| Drain-source voltage | -200V |
| Drain current | -68A |
| Power dissipation | 568W |
| Case | TO268 |
| Gate-source voltage | ±15V |
| On-state resistance | 55mΩ |
| Mounting | SMD |
| Gate charge | 380nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Reverse recovery time | 245ns |