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Transistor: P-MOSFET | SPLIT GATE TRENCH | unipolar | -100V | -9.5A
Transistor: P-MOSFET | SPLIT GATE TRENCH | unipolar | -100V | -9.5A
EB Kods: EB242770146
Ražotāja preces kods: YJQ15GP10A
Ražotāja preces kods:
YJQ15GP10A
Ražotājs, zīmols: YANGJIE TECHNOLOGY
Ražotājs, zīmols:
YANGJIE TECHNOLOGY
0,47 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Technology | SPLIT GATE TRENCH |
| Polarisation | unipolar |
| Drain-source voltage | -100V |
| Drain current | -9.5A |
| Pulsed drain current | -45A |
| Power dissipation | 17.2W |
| Case | DFN3.3x3.3 EP |
| Gate-source voltage | ±20V |
| On-state resistance | 0.12Ω |
| Mounting | SMD |
| Gate charge | 3.98nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |