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Transistor: N-MOSFET | PolarHV™ | unipolar | 800V | 3.6A | Idm: 8A | 100W

EB Kods: EB119532436

Ražotāja preces kods: 
IXTP4N80P

Ražotājs, zīmols: 
IXYS

 3,82 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologyPolarHV™
Polarisationunipolar
Drain-source voltage800V
Drain current3.6A
Pulsed drain current8A
Power dissipation100W
CaseTO220AB
Gate-source voltage±30V
On-state resistance3.4Ω
MountingTHT
Gate charge14.2nC
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesstandard power mosfet
Reverse recovery time560ns