Tulkot latviski
Transistor: P-MOSFET | TrenchP™ | unipolar | -100V | -26A | 150W | TO252
Transistor: P-MOSFET | TrenchP™ | unipolar | -100V | -26A | 150W | TO252
EB Kods: EB945799081
Ražotāja preces kods: IXTY26P10T
Ražotāja preces kods:
IXTY26P10T
Ražotājs, zīmols: IXYS
Ražotājs, zīmols:
IXYS
5,39 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | P-MOSFET |
| Technology | TrenchP™ |
| Polarisation | unipolar |
| Drain-source voltage | -100V |
| Drain current | -26A |
| Power dissipation | 150W |
| Case | TO252 |
| Gate-source voltage | ±15V |
| On-state resistance | 90mΩ |
| Mounting | SMD |
| Gate charge | 52nC |
| Kind of package | tube |
| Kind of channel | enhanced |
| Reverse recovery time | 70ns |