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Transistor: N-MOSFET | unipolar | 600V | 0.76A | 27W | IPAK

EB Kods: EB531167817

Ražotāja preces kods: 
STU1HN60K3

Ražotājs, zīmols: 
STMicroelectronics

 0,92 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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Product Properties

Type of transistorN-MOSFET
TechnologySuperMESH3™
Polarisationunipolar
Drain-source voltage600V
Drain current0.76A
Power dissipation27W
CaseIPAK
Gate-source voltage±30V
On-state resistance8Ω
MountingTHT
Kind of packagetube
Kind of channelenhanced
Features of semiconductor devicesESD protected gate