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Transistor: N-MOSFET | SiC | unipolar | 1.2kV | 29.6A | Idm: 85A | 187.5W

EB Kods: EB1914919596

Ražotāja preces kods: 
AOM065V120X2

Ražotājs, zīmols: 
ALPHA & OMEGA SEMICONDUCTOR

 23,80 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage1.2kV
Drain current29.6A
Pulsed drain current85A
Power dissipation187.5W
CaseTO247-4
Gate-source voltage-5...15V
On-state resistance90mΩ
MountingTHT
Gate charge62.3nC
Kind of packagetube
Kind of channelenhancement