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Transistor: N-MOSFET | SiC | unipolar | 900V | 32A | Idm: 184A | 110W

EB Kods: EB1605801066

Ražotāja preces kods: 
NTHL060N090SC1

Ražotājs, zīmols: 
ONSEMI

 19,01 € 
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas. 
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Product Properties

Type of transistorN-MOSFET
TechnologySiC
Polarisationunipolar
Drain-source voltage900V
Drain current32A
Pulsed drain current184A
Power dissipation110W
CaseTO247-3
Gate-source voltage-10...20V
On-state resistance60mΩ
MountingTHT
Gate charge87nC
Kind of packagetube
Kind of channelenhanced