Tulkot latviski
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 45A | Idm: 140A | 416W
Transistor: N-MOSFET | SiC | unipolar | 1.7kV | 45A | Idm: 140A | 416W
EB Kods: EB223320773
Ražotāja preces kods: DIW170SIC070
Ražotāja preces kods:
DIW170SIC070
Ražotājs, zīmols: DIOTEC SEMICONDUCTOR
Ražotājs, zīmols:
DIOTEC SEMICONDUCTOR
21,41 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Technology | SiC |
| Polarisation | unipolar |
| Drain-source voltage | 1.7kV |
| Drain current | 45A |
| Pulsed drain current | 140A |
| Power dissipation | 416W |
| Case | TO247-3 |
| Gate-source voltage | -5...20V |
| On-state resistance | 28mΩ |
| Mounting | THT |
| Gate charge | 80nC |
| Kind of package | tube |
| Kind of channel | enhanced |