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SAMSUNG 1TB 970 EVO PLUS NVME SSD
SAMSUNG 1TB 970 EVO PLUS NVME SSD
EB Kods: EB1918554665
Ražotāja preces kods: MZ-V7S1T0BW
Ražotāja preces kods:
MZ-V7S1T0BW
Ražotājs, zīmols: SAMSUNG
Ražotājs, zīmols:
SAMSUNG
140,02 €
Ar PVN / gb
Pieejams piegādātāja noliktavā 2 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
The latest generation of maximum performance. The 970 EVO Plus is faster than the 970 EVO, thanks to the latest V-NAND technology and firmware optimization. It maximizes the NVMETM bandwidth potential, delivering unbeatable computing performance. Up to 2 TB capacity and up to 1200 TBW durability.
The 970 EVO Plus reaches the sequential reading/write speed of up to 3500/3300 MB/s up to 53% faster than 970 EVOs. The latest V-NAND technology, which delivers better NAND performance and higher energy efficiency, optimized firmware, tested control, and Intelligent TurboWrite acceleration.
Another NVMeTM SSD. Advantage. The 970 EVO Plus is composed of up to 2 TB in the compact M.2 (2280) construction, greatly expanding the memory capacity and saving space for other components. Samsung’s innovative technology delivers memory capacity to do and achieve more.
The 970 EVO Plus reaches the sequential reading/write speed of up to 3500/3300 MB/s up to 53% faster than 970 EVOs. The latest V-NAND technology, which delivers better NAND performance and higher energy efficiency, optimized firmware, tested control, and Intelligent TurboWrite acceleration.
Another NVMeTM SSD. Advantage. The 970 EVO Plus is composed of up to 2 TB in the compact M.2 (2280) construction, greatly expanding the memory capacity and saving space for other components. Samsung’s innovative technology delivers memory capacity to do and achieve more.
| Hard disk drive type | SSD |
| Hard disk drive capacity | 1 TB |
| Hard disk interface | M.2 |
| Hard disk size, " | M.2 |
| Read speed, MB/s | 3500 |
| Write speed, MB/s | 3300 |
| Weight, g | 8 |
| Height, mm | 22.15 |
| Width, mm | 80.15 |
| Depth, mm | 2.38 |
| Internal memory type | Samsung V-NAND 3-bit MLC |
| Security algorithms supported | AES 256-bit (Class 0)TCG/Opal IEEE1667 (Encrypted drive) |
| Operating temperature range (T-T), °C | 0 - 70 |
| Cache memory | 1GB Low Power DDR4 SENDRAM |
| Hard disk controller | Samsung Phoenix Controller |
| Interface | PCIe Gen 3.0 x4, NVMe 1.3 |