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Transistor: N-MOSFET | unipolar | 100V | 200A | Idm: 400A | 375W | D2PAK
Transistor: N-MOSFET | unipolar | 100V | 200A | Idm: 400A | 375W | D2PAK
EB Kods: EB1297071569
Ražotāja preces kods: CSD19536KTTT
Ražotāja preces kods:
CSD19536KTTT
Ražotājs, zīmols: TEXAS INSTRUMENTS
Ražotājs, zīmols:
TEXAS INSTRUMENTS
7,96 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
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⛟ Piegāde 1-3 darba dienas pēc apmaksas.
Type of transistor | N-MOSFET |
Technology | NexFET™ |
Polarisation | unipolar |
Drain-source voltage | 100V |
Drain current | 200A |
Pulsed drain current | 400A |
Power dissipation | 375W |
Case | D2PAK |
Gate-source voltage | ±20V |
On-state resistance | 2.8mΩ |
Mounting | SMD |
Gate charge | 118nC |
Kind of package | reel |
Kind of package | tape |
Kind of channel | enhanced |