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Transistor: N-MOSFET | unipolar | 100V | 185A | Idm: 950A | 340W
Transistor: N-MOSFET | unipolar | 100V | 185A | Idm: 950A | 340W
EB Kods: EB683020096
Ražotāja preces kods: DI200N10D2
Ražotāja preces kods:
DI200N10D2
Ražotājs, zīmols: DIOTEC SEMICONDUCTOR
Ražotājs, zīmols:
DIOTEC SEMICONDUCTOR
2,84 €
Ar PVN / gb
Pieejams piegādātāja noliktavā >10 gab.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
⛟ Piegāde 1-3 darba dienas pēc apmaksas.
| Type of transistor | N-MOSFET |
| Polarisation | unipolar |
| Drain-source voltage | 100V |
| Drain current | 185A |
| Pulsed drain current | 950A |
| Power dissipation | 340W |
| Case | D2PAK |
| Case | TO263AB |
| Gate-source voltage | ±20V |
| On-state resistance | 2.3mΩ |
| Mounting | SMD |
| Gate charge | 262nC |
| Kind of package | reel |
| Kind of package | tape |
| Kind of channel | enhanced |